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Thickness, Structure, Composition and Optical Properties of Electrochemically Grown Iron Selenide and Iron Diselenide Thin Films

Bibliographic Data

ID19518055
AuthorsS Thanikaikarasan (0000-0003-0305-2925, Saveetha University), R Perumal (0000-0001-7038-5506, Saveetha University), E Thanikaivelan (Vel Tech Rangarajan Dr. Sagunthala R&D Institute of Science and Technology), Tansir Ahamad (0000-0002-9400-5317, King Saud University), Saad M Alshehri (0000-0002-4990-6183, King Saud University)
Year2023
Volume26
Issue2
Pages101-106
Publication date2023-06-30
Open AccessYes
TypeARTICLE
VenueNew Materialisms (JOURNAL)
Journal identifiersISSN: 1480-2422 • E-ISSN: 2292-1168
PublisherJournal of New Materials for Electrochemical Systems (PUBLISHER)
DOI10.14447/jnmes.v26i2.a01
OpenAlexW4385639781
LanguageEN

Iron chalcogenides attracted researchers in several applications due to its prominent characteristics viz., band gap, crystalline nature and composition along with its chemical and optical properties.The main intention of the present work is to determine the modified features of iron selenide and iron diselenide thin film growth by simple electrodeposition technique.Thin films of iron selenide and iron diselenide are deposited on transparent nature conducting substrates.Structural properties reported that the deposited films found to be polycrystalline in nature.The structural parameters such as crystallite size, strain, dislocation density and stacking fault probability were determined.Microscopic images showed that deposited films have well defined morphology with nearly stoichiometry.The band gap value of the deposited films found to be around 1.21 eV.The parameters refractive index, extinction coefficient of the deposited films are estimated

Art · Diselenide · Metallurgy · Nanotechnology · Selenide · Selenium · Thin film · 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Materials Science · Semiconductor materials and interfaces

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