Improvements to a Microelectronic Design and Fabrication Course
Bibliographic Data
| ID | 20296173 |
|---|---|
| Authors | David Parent (0000-0003-0098-6749, San Jose State University), Eric Basham (San Jose State University), Yasser Dessouky (San Jose State University), Stacy Gleixner (San Jose State University), Gregory Young (0000-0001-9886-6205, San Jose State University), Emily Allen (0000-0003-2964-1189, San Jose State University) |
| Year | 2005 |
| Volume | 48 |
| Issue | 3 |
| Pages | 497-502 |
| Publication date | 2005-08-01 |
| Peer Reviewed | Yes |
| Open Access | Yes |
| Type | ARTICLE |
| Venue | IEEE Transactions on Education (JOURNAL) |
| Journal identifiers | ISSN: 0018-9359 • E-ISSN: 1557-9638 |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) (PUBLISHER) |
| DOI | 10.1109/te.2005.849761 |
| OpenAlex | W2102103483 |
| Language | EN |
| Citations received | 3 |
| References cited | 9 |
This paper presents improvements made to a complimentary metal-oxide-semiconductor (CMOS) fabrication laboratory course to increase student learning and student impact (enrollment). The three main improvements to the course discussed include: 1) use of a two-mask MOS process that significantly reduced the time students took previously to design, fabricate, and verify the electrical properties of a metal-oxide-semiconductor field-effect transistor (MOSFET) process; 2) students' use of a semicustom integrated circuit (IC) design that significantly reduced the average design and processing time of previous years; and 3) development and implementation of a system of course prerequisites, which allowed a larger number of students to enroll in the course
CMOS · Course (navigation) · Electrical engineering · Electronic engineering · Engineering physics · Fabrication · Integrated circuit · Microelectronics · MOSFET · Process (computing) · Semiconductor device fabrication · Transistor · Voltage · Computer Science · Engineering · Engineering Education and Curriculum Development · Experimental Learning in Engineering · Nanotechnology research and applications
| Unique citing works | 3 |
|---|---|
| Citations per year | 0,18 |
| Citation span | 2009 - 2015 (7) |
| Citation velocity | historical |
| Highly cited | No |
| Citation types | Neutral: 3 |