Concentration dependence of structural changes in lead telluride alloys with cadmium selenide impurities

Introduction. Today, research on AIVBVI semiconductor compounds is of scientific interest due to their application in renewable energy as converters of thermal energy into electrical energy and vice versa. In natural conditions, these compounds are represented by the forms of altaite (PbTe), clausthalite (PbSe), and galena (PbS). The crystal structure of PbX compounds belongs to the cubic system with a sodium chloride lattice type and the Fm3m space group. To fully utilize these materials in solid-state electronics, it is necessary to have more information about their structure and physical and chemical properties. Materials and Methods. Developed technologies and high-temperature ultrasonic equipment for obtaining homogenized homogeneous alloys. X-ray structural and phase studies using a diffractometer and a special software package for decoding the results. High-purity alloy components: lead, tellurium, cadmium selenide (99.999% each). Exctl and OriginPro graphical plotting software. Results. As a result of the conducted experimental studies, it was found that new phases of different modifications of the crystal structure and parameters of the elementary cell are formed in PbTe-CdSe alloys. An increase in the concentration of the alloying component up to 5 mol% leads to phase transformations and a significant increase in the lattice period of cadmium telluride, which has the sphalerite modification. The concentration dependencies of the lattice parameter, density, and volume of the phases formed in the alloy and the PbTe matrix have also been established. Discussion. It was found that the introduction of cadmium selenide into the crystalline matrix of lead telluride contributes to the formation of additional phase components. The crystal lattice of these new phases has a face-centered cubic structure with the space group Fm-3m. However, compared to the reference compound, these phases exhibit a decrease in the value of the crystal lattice period. Conclusion. In this study, we analyzed the concentration dependencies of the structural parameters of solid solutions in the PbTe-CdSe system, obtained through ultrasonic processing of the melt. Resume. The proposed research results are relevant and can be used to improve the domestic component base in the field of solid-state semiconductor electronics, which has a long tradition in the North Caucasus region

Alloy · Cadmium selenide · Crystal structure · Diffractometer · Impurity · Lattice constant · Telluride · Tellurium · Advanced Materials and Semiconductor Technologies · Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films