Kathleen J Callanan
Biographic Data
| ID | 10850781 |
|---|---|
| NAME | Kathleen J Callanan |
| GIVEN NAMES | Kathleen J |
| FAMILY NAME | Callanan |
| SIGNATURE | CALLANAN K J |
| AFFILIATIONS | Sophia University |
| VERIFIED | No |
| TOTAL WORKS | 1 |
| TOTAL CITATIONS | 0 |
| WORKS AS AUTHOR | 1 |
| WORKS AS EDITOR | 0 |
| FIRST PUBLICATION YEAR | 1977 |
| LATEST PUBLICATION YEAR | 1977 |
| H-INDEX | 0 |
A P-Channel MOS IC for Educational Purposes Using a Two-Photomask Process
The two-photomask process for the fabrication of p-channel MOS devices provides a full introduction to the fundamental planar process. A 1000 A double layer insulator fim of silicon dioxide (700 Å) and silicon nitride (300 Å) is used for the gate and field regions of the devices. Using chemical vapor deposited boron nitride as the boron diffusion source eliminates the usual photo-process steps for the etching of the contact holes for the source a…
No prominent works on this page.
A P-Channel MOS IC for Educational Purposes Using a Two-Photomask Process
The two-photomask process for the fabrication of p-channel MOS devices provides a full introduction to the fundamental planar process. A 1000 A double layer insulator fim of silicon dioxide (700 Å) and silicon nitride (300 Å) is used for the gate and field regions of the devices. Using chemical vapor deposited boron nitride as the boron diffusion source eliminates the usual photo-process steps for the etching of the contact holes for the source a…
Advancements in Photolithography Techniques (1 work) · Advancements in Semiconductor Devices and Circuit Design (1 work) · Computer Science (1 work) · Electronic engineering (1 work) · Engineering (1 work) · Etching (microfabrication) (1 work) · Fabrication (1 work) · Layer (electronics) (1 work) · Materials Science (1 work) · Nanotechnology (1 work)