Donald T Comer
Biographic Data
| ID | 9326519 |
|---|---|
| NAME | Donald T Comer |
| GIVEN NAMES | Donald T |
| FAMILY NAME | Comer |
| SIGNATURE | COMER D T |
| AFFILIATIONS | Brigham Young University |
| VERIFIED | No |
| TOTAL WORKS | 2 |
| TOTAL CITATIONS | 0 |
| WORKS AS AUTHOR | 2 |
| WORKS AS EDITOR | 0 |
| FIRST PUBLICATION YEAR | 2001 |
| LATEST PUBLICATION YEAR | 2004 |
| H-INDEX | 0 |
Operation of Analog MOS Circuits in the Weak or Moderate Inversion Region
In analog metal-oxide-semiconductor (MOS) circuit design, the ratio of channel width to channel length (W/L) can become very high, often exceeding a value of 1000. This high ratio may result either from wide channel devices, designed to achieve high transconductance, or from short-channel-length devices used in high-frequency circuits. Since drain current is generally proportional to the W/L ratio, the effective gate-to-source voltage to achieve …
Teaching MOS integrated circuit amplifier design to undergraduates
The enhancement-mode MOSFET is the primary active device used in present-day digital and mixed-signal integrated circuit processes. Thus, it is important to introduce this device and associated circuit design methods early in the electronics curriculum. This article discusses four integrated circuit MOSFET amplifier configurations; the current source/active load stage, the source follower, the cascode connection, and the differential stage with a…
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Teaching MOS integrated circuit amplifier design to undergraduates
The enhancement-mode MOSFET is the primary active device used in present-day digital and mixed-signal integrated circuit processes. Thus, it is important to introduce this device and associated circuit design methods early in the electronics curriculum. This article discusses four integrated circuit MOSFET amplifier configurations; the current source/active load stage, the source follower, the cascode connection, and the differential stage with a…
Operation of Analog MOS Circuits in the Weak or Moderate Inversion Region
In analog metal-oxide-semiconductor (MOS) circuit design, the ratio of channel width to channel length (W/L) can become very high, often exceeding a value of 1000. This high ratio may result either from wide channel devices, designed to achieve high transconductance, or from short-channel-length devices used in high-frequency circuits. Since drain current is generally proportional to the W/L ratio, the effective gate-to-source voltage to achieve …
Advancements in Semiconductor Devices and Circuit Design (2 works) · Amplifier (2 works) · Analog and Mixed-Signal Circuit Design (2 works) · CMOS (2 works) · Electrical engineering (2 works) · Electronic engineering (2 works) · Engineering (2 works) · Transistor (2 works) · Voltage (2 works) · Analogue electronics (1 work)