Studies on Electrodeposited NiS Thin Films
Bibliographic Data
| ID | 19518170 |
|---|---|
| Authors | B Bharathi (0000-0001-9531-1300), S Thanikaikarasan (0000-0003-0305-2925), P V Chandrasekar (Fuzhou University), Pratap Kollu (0000-0001-6250-9396, Indian Institute of Technology Bombay), T Mahalingam (Ajou University), Luis Ixtlilco (Universidad Autónoma de Guerrero) |
| Year | 2014 |
| Volume | 17 |
| Issue | 3 |
| Pages | 167-171 |
| Publication date | 2014-10-03 |
| Open Access | No |
| Type | ARTICLE |
| Venue | New Materialisms (JOURNAL) |
| Journal identifiers | ISSN: 1480-2422 • E-ISSN: 2292-1168 |
| Publisher | Journal of New Materials for Electrochemical Systems (PUBLISHER) |
| DOI | 10.14447/jnmes.v17i3.417 |
| OpenAlex | W2753021489 |
| Language | EN |
Thin films of NiS have been deposited on indium doped tin oxide coated conducting glass substrates using electrodeposition technique. Structural studies revealed that the deposited films exhibit hexagonal structure with preferential orientation along (002) plane. Structural parameters such as crystallite size, strain and dislocation density are calculated for films with different thickness values obtained at various deposition time. The film composition and surface morphology have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. Optical absorption analysis showed that the deposited films possess band gap value around 0.7 eV
Absorption edge · Band gap · Composite material · Crystallite · Dislocation · Doping · Indium · Indium tin oxide · Metallurgy · Nanotechnology · Optoelectronics · Scanning electron microscope · Thin film · Tin oxide · Chalcogenide Semiconductor Thin Films · Chemistry · Copper-based nanomaterials and applications · Materials Science · Quantum Dots Synthesis And Properties
| Highly cited | No |
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