Electrochemical Growth and Characterization of Lead Sulphide Thin Films
Bibliographic Data
| ID | 19518209 |
|---|---|
| Authors | S Thanikaikarasan (0000-0003-0305-2925), T Mahalingam (Karunya University), S Veeramuthumari, Luis Ixtlilco (Universidad Autónoma de Guerrero) |
| Year | 2013 |
| Volume | 16 |
| Issue | 2 |
| Pages | 133-137 |
| Publication date | 2013-04-15 |
| Open Access | No |
| Type | ARTICLE |
| Venue | New Materialisms (JOURNAL) |
| Journal identifiers | ISSN: 1480-2422 • E-ISSN: 2292-1168 |
| Publisher | Journal of New Materials for Electrochemical Systems (PUBLISHER) |
| DOI | 10.14447/jnmes.v16i2.33 |
| OpenAlex | W2245734631 |
| Language | EN |
Growth of lead sulphide thin films has been carried out electrochemically on indium doped tin oxide coated conducting glass substrates from an aqueous acidic bath containing Pb(CH3COO)2 and Na2S2O3. X-ray diffraction pattern showed that the deposited films possess cubic structure with most prominent reflection along (200) plane. The dependency of microstructural parameters such as crystallite size, strain and dislocation density with film thickness has been analyzed. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. Optical absorption analysis showed that the prepared films possess a direct band gap value of 0.37 eV
Band gap · Composite material · Crystallite · Dislocation · Doping · Indium · Indium tin oxide · Metallurgy · Nanotechnology · Optoelectronics · Scanning electron microscope · Thin film · Tin oxide · Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Chemical Engineering · Chemistry · Materials Science · Quantum Dots Synthesis And Properties
| Highly cited | No |
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