Growth of Copper Telluride Thin Films using Electrodeposition
Bibliographic Data
| ID | 19518508 |
|---|---|
| Authors | P Jeyakumar (0000-0002-7270-1725), P D Jeyakumar (0000-0003-0298-9468, Government of Tamil Nadu), S Thanikaikarasan (0000-0003-0305-2925), B Natarajan (0000-0001-6429-9003, Government of Tamil Nadu), T Mahalingam (Alagappa University), Luis Ixtlilco (Universidad Autónoma de Guerrero) |
| Year | 2018 |
| Volume | 21 |
| Issue | 1 |
| Pages | 015-019 |
| Publication date | 2018-04-16 |
| Open Access | No |
| Type | ARTICLE |
| Venue | New Materialisms (JOURNAL) |
| Journal identifiers | ISSN: 1480-2422 • E-ISSN: 2292-1168 |
| Publisher | Journal of New Materials for Electrochemical Systems (PUBLISHER) |
| DOI | 10.14447/jnmes.v21i1.516 |
| OpenAlex | W2888851917 |
| Language | EN |
Copper Telluride thin films have been prepared on Fluorine doped Tin Oxide coated conducting glass substrates using electrodeposition technique. Cyclic voltammetric analysis has been carried out to analyze the growth mechanism of the deposited films. Thickness value of the deposited films has been estimated using Stylus profilometry. X-ray diffraction pattern revealed that the prepared films possess polycrystalline in nature. Microstructural parameters such as crystallite size, strain and dislocation density are evaluated using observed X-ray diffraction data. Optical absorption analysis showed that the prepared films are found to exhibit band gap value around 2.03 eV
Band gap · Copper · Copper oxide · Crystallite · Diffraction · Doping · Metallurgy · Nanotechnology · Optics · Optoelectronics · Telluride · Thin film · Tin oxide · Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films · Chemistry · Materials Science · Quantum Dots Synthesis And Properties
| Highly cited | No |
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